Fowler-Nordheim Tunneling Characterization on Poly1-Poly2 Capacitors for the Implementation of Analog Memories in CMOS 0.5 μmTechnology
نویسندگان
چکیده
منابع مشابه
Injector Design for Optimized Tunneling in Standard CMOS Floating-Gate Analog Memories
Programming mechanisms in floating-gate non-volatile (EEPROM) standard-CMOS memories are briefly reviewed. A methodology to optimize the programming time in poly1-poly2 Fowler-Nordheim based structures is proposed. From design constraints, the optimum number of bumps and bootstrap capacitance value are obtained to maximize the programming speed for a given programming voltage.
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ژورنال
عنوان ژورنال: Advances in Condensed Matter Physics
سال: 2014
ISSN: 1687-8108,1687-8124
DOI: 10.1155/2014/632785